Comparison of iron-related recombination centers in boron, gallium, and indium doped silicon analyzed by defect parameter contour mapping
نویسندگان
چکیده
منابع مشابه
Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron
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ژورنال
عنوان ژورنال: Energy Procedia
سال: 2017
ISSN: 1876-6102
DOI: 10.1016/j.egypro.2017.09.321